Search results for "IMPACT IONIZATION"
showing 5 items of 5 documents
Failure analysis of normally-off GaN HEMTs under avalanche conditions
2020
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) are promising devices in the power electronics field owing to their wide bandgap (WBG). However, all the potential advantages provided by their WBG require reliability improvement. In industrial applications, robustness is one of the main factors considered by circuit designers. This study focuses on the observation of the degradation behavior of the main waveforms of unclamped inductive-switching (UIS) test circuits of two different commercial GaN HEMT structures. The relevance of this study lies in the potential applications of these devices to high-voltage applications and automotive systems where they are subjected to many…
Experimental investigation of the kink effect and the low frequency noise properties in pseudomorphic HEMT’s
2005
The kink effect in low-noise pseudomorphic (AlGaAs/InGaAs) HEMT's has been examined in detail by investigating the steady-state and pulsed I-V characteristics, the behavior of the output conductance dispersion and the performance of the gate leakage current to understand its origin. No clear evidence of impact ionization occurrence in the InGaAs channel at kink bias conditions (V-DS.kink = 1.5 V) has been found, thus suggesting that the predominant mechanism should be attributed to trap-related phenomena. A significant rise of the gate current has been found at very high drain voltages (far from V-DS.kink) associated with low drain current values which is probably due to impact ionization o…
Single-Event Burnout Mechanisms in SiC Power MOSFETs
2018
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. peerReviewed
A study of VUV emission and the extracted electron-ion ratio in hydrogen and deuterium plasmas of a filament-driven H−/D− ion source
2019
Vacuum ultraviolet (VUV) emission diagnostics for studying differences of electron impact processes in hydrogen and deuterium plasmas are presented. The method is applied to study a filament driven multicusp arc discharge negative ion source by comparing the VUV-emission intensities of different emission bands and extracted currents of H−/D− ions and electrons. It was found that the ratio of coextracted electrons to extracted ions is four times higher for deuterium than for hydrogen. No significant differences of the VUV-spectra or volumetric rates of ionization, excitation, production of high vibrational states, and dissociation were found between the plasmas of the two isotopes. The volum…
ECRIS plasma spectroscopy with a high resolution spectrometer
2020
Electron Cyclotron Resonance Ion Source (ECRIS) plasmas contain high-energy electrons and highly charged ions implying that only noninvasive methods such as optical emission spectroscopy are reliable in their characterization. A high-resolution spectrometer (10 pm FWHM at 632 nm) enabling the detection of weak emission lines has been developed at University of Jyväskylä, Department of Physics (JYFL) for this purpose. Diagnostics results probing the densities of ions, neutral atoms, and the temperature of the cold electron population in the JYFL 14 GHz ECRIS are described. For example, it has been observed that the cold electron temperature drops from 40 eV to 20 eV when the extraction volta…